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Two dimensional electron gas in InN-based heterostructures : Effects of spontaneous and piezoelectric polarization

Identifieur interne : 005B29 ( Main/Repository ); précédent : 005B28; suivant : 005B30

Two dimensional electron gas in InN-based heterostructures : Effects of spontaneous and piezoelectric polarization

Auteurs : RBID : Pascal:08-0085999

Descripteurs français

Pascal (Inist)
- Gaz électron 2 dimensions, Hétérostructure, Haute performance, Transistor mobilité électron élevée, Désadaptation, Densité porteur charge, Nitrure d'indium, Piézoélectrique, Nitrure de gallium, Composé binaire, Nitrure d'aluminium, Composé ternaire, In N, InN, Ga N, GaN, Al Ga N, AlGaN.

English descriptors

KwdEn :
- Aluminium nitride, Binary compound, Charge carrier density, Gallium nitride, Heterostructures, High electron mobility transistor, High performance, Indium nitride, Mismatching, Piezoelectric materials, Ternary compound, Two-dimensional electron gas.

Abstract

This paper predicts and describes the formation of two dimensional electron gas (2DEG) in InN-based heterostructures, as a promising candidate for future high performance high electron mobility transistor (HEMT). The effects of spontaneous and piezoelectric polarization on carrier confinement and localization of 2DEGs have been studied. These include the theoretical analysis and calculation of spontaneous and piezoelectric polarization, and polarization induced sheet charge bound at the interfaces of InN/InGa(Al)N/InN heterostructures as a function of lattice mismatch induced strain. Significant effects of polarity are found on carrier confinement and localization of 2DEGs. A high sheet carrier concentration and strong electron confinement at specific interfaces of the InN-based heterostructures are predicted as a consequence of piezoelectric and spontaneous polarization effects. The calculated sheet carrier concentration reaches as high as 2.12 x 10¹⁴ and 7.08 x 10¹³ cm^-2 for A1N and GaN barriers, respectively. These sheet carriers generated in InN-based heterostructures are higher than the reported values for the conventional GaN-based AlGaN/GaN HEMTs. The accumulation of electrons can be confirmed for a barrier thickness of above 4 nm.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Two dimensional electron gas in InN-based heterostructures : Effects of spontaneous and piezoelectric polarization</title>
<author><name sortKey="Tanvir Hasan, Md" uniqKey="Tanvir Hasan M">Md. Tanvir Hasan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET)</s1>
<s2>Khulna 920300</s2>
<s3>BGD</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<country>Bangladesh</country>
<wicri:noRegion>Khulna 920300</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Bhuiyan, Ashraful G" uniqKey="Bhuiyan A">Ashraful G. Bhuiyan</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET)</s1>
<s2>Khulna 920300</s2>
<s3>BGD</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Bangladesh</country>
<wicri:noRegion>Khulna 920300</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Yamamoto, Akio" uniqKey="Yamamoto A">Akio Yamamoto</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Electronics Engineering, University of Fukui</s1>
<s2>Bunkyo 3-9-1, Fukui 910-507</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Bunkyo 3-9-1, Fukui 910-507</wicri:noRegion>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">08-0085999</idno>
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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium nitride</term>
<term>Binary compound</term>
<term>Charge carrier density</term>
<term>Gallium nitride</term>
<term>Heterostructures</term>
<term>High electron mobility transistor</term>
<term>High performance</term>
<term>Indium nitride</term>
<term>Mismatching</term>
<term>Piezoelectric materials</term>
<term>Ternary compound</term>
<term>Two-dimensional electron gas</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Gaz électron 2 dimensions</term>
<term>Hétérostructure</term>
<term>Haute performance</term>
<term>Transistor mobilité électron élevée</term>
<term>Désadaptation</term>
<term>Densité porteur charge</term>
<term>Nitrure d'indium</term>
<term>Piézoélectrique</term>
<term>Nitrure de gallium</term>
<term>Composé binaire</term>
<term>Nitrure d'aluminium</term>
<term>Composé ternaire</term>
<term>In N</term>
<term>InN</term>
<term>Ga N</term>
<term>GaN</term>
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<front><div type="abstract" xml:lang="en">This paper predicts and describes the formation of two dimensional electron gas (2DEG) in InN-based heterostructures, as a promising candidate for future high performance high electron mobility transistor (HEMT). The effects of spontaneous and piezoelectric polarization on carrier confinement and localization of 2DEGs have been studied. These include the theoretical analysis and calculation of spontaneous and piezoelectric polarization, and polarization induced sheet charge bound at the interfaces of InN/InGa(Al)N/InN heterostructures as a function of lattice mismatch induced strain. Significant effects of polarity are found on carrier confinement and localization of 2DEGs. A high sheet carrier concentration and strong electron confinement at specific interfaces of the InN-based heterostructures are predicted as a consequence of piezoelectric and spontaneous polarization effects. The calculated sheet carrier concentration reaches as high as 2.12 x 10<sup>14</sup>
 and 7.08 x 10<sup>13</sup>
 cm<sup>-2</sup>
 for A1N and GaN barriers, respectively. These sheet carriers generated in InN-based heterostructures are higher than the reported values for the conventional GaN-based AlGaN/GaN HEMTs. The accumulation of electrons can be confirmed for a barrier thickness of above 4 nm.</div>
</front>
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<fA08 i1="01" i2="1" l="ENG"><s1>Two dimensional electron gas in InN-based heterostructures : Effects of spontaneous and piezoelectric polarization</s1>
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<fA11 i1="01" i2="1"><s1>TANVIR HASAN (Md.)</s1>
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<fA11 i1="02" i2="1"><s1>BHUIYAN (Ashraful G.)</s1>
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<fA11 i1="03" i2="1"><s1>YAMAMOTO (Akio)</s1>
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<fA14 i1="01"><s1>Department of Electrical and Electronic Engineering, Khulna University of Engineering and Technology (KUET)</s1>
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<s3>BGD</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
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<fA14 i1="02"><s1>Department of Electrical and Electronics Engineering, University of Fukui</s1>
<s2>Bunkyo 3-9-1, Fukui 910-507</s2>
<s3>JPN</s3>
<sZ>3 aut.</sZ>
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<fC01 i1="01" l="ENG"><s0>This paper predicts and describes the formation of two dimensional electron gas (2DEG) in InN-based heterostructures, as a promising candidate for future high performance high electron mobility transistor (HEMT). The effects of spontaneous and piezoelectric polarization on carrier confinement and localization of 2DEGs have been studied. These include the theoretical analysis and calculation of spontaneous and piezoelectric polarization, and polarization induced sheet charge bound at the interfaces of InN/InGa(Al)N/InN heterostructures as a function of lattice mismatch induced strain. Significant effects of polarity are found on carrier confinement and localization of 2DEGs. A high sheet carrier concentration and strong electron confinement at specific interfaces of the InN-based heterostructures are predicted as a consequence of piezoelectric and spontaneous polarization effects. The calculated sheet carrier concentration reaches as high as 2.12 x 10<sup>14</sup>
 and 7.08 x 10<sup>13</sup>
 cm<sup>-2</sup>
 for A1N and GaN barriers, respectively. These sheet carriers generated in InN-based heterostructures are higher than the reported values for the conventional GaN-based AlGaN/GaN HEMTs. The accumulation of electrons can be confirmed for a barrier thickness of above 4 nm.</s0>
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<fC02 i1="01" i2="X"><s0>001D03F02</s0>
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<s5>01</s5>
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<s5>01</s5>
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<s5>04</s5>
</fC03>
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<s5>05</s5>
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<s5>05</s5>
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<s5>05</s5>
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<s5>06</s5>
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<s5>06</s5>
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<fC03 i1="06" i2="X" l="SPA"><s0>Concentración portador carga</s0>
<s5>06</s5>
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<s5>22</s5>
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<s5>22</s5>
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<s5>22</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>23</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>24</s5>
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<s5>25</s5>
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<s5>25</s5>
</fC03>
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<s5>25</s5>
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<s5>26</s5>
</fC03>
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<s5>26</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA"><s0>Aluminio nitruro</s0>
<s5>26</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE"><s0>Composé ternaire</s0>
<s5>27</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Ternary compound</s0>
<s5>27</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Compuesto ternario</s0>
<s5>27</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>In N</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Ga N</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>85</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>Al Ga N</s0>
<s4>INC</s4>
<s5>86</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>AlGaN</s0>
<s4>INC</s4>
<s5>87</s5>
</fC03>
<fN21><s1>052</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
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Two dimensional electron gas in InN-based heterostructures : Effects of spontaneous and piezoelectric polarization

Two dimensional electron gas in InN-based heterostructures : Effects of spontaneous and piezoelectric polarization

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri